DB HiTek, a number one 8-inch specialty foundry, introduced that it’s within the closing phases of growth of its 650V E-Mode GaN HEMT (Gallium Nitride Excessive-Electron Mobility Transistor) course of, a next-generation energy semiconductor platform. The corporate can also be to supply a devoted GaN MPW (multi-project wafer) program on the finish of October.

In contrast with conventional silicon-based energy units, GaN-based semiconductors ship superior efficiency beneath high-voltage, high-frequency, and high-temperature working circumstances, providing distinctive energy effectivity. Specifically, 650V E-Mode GaN HEMT stands out for its high-speed switching efficiency and sturdy operational stability, making it well-suited for EV charging infrastructure, energy conversion methods in hyperscale information facilities, and superior 5G community tools.

In 2022, when the compound semiconductor market was nonetheless in its infancy, DB HiTek recognized GaN and SiC as key progress drivers and has since invested considerably in course of growth. A DB HiTek spokesperson commented: “DB HiTek is already acknowledged worldwide for its management in silicon-based energy semiconductor applied sciences, together with the event of the business’s first 0.18µm BCDMOS course of. By including GaN course of capabilities, we expect to boost the corporate’s competitiveness with a broad expertise portfolio.”

Following completion of the 650V GaN HEMT course of, DB HiTek plans to roll out a 200V GaN course of and a 650V GaN course of optimized for IC (Built-in Circuit) integration by the tip of 2026. Trying forward, the corporate goals to increase its GaN platform throughout a wider voltage spectrum, aligned with market wants and buyer necessities.

To help these initiatives, DB HiTek is increasing the cleanroom services of Fab2, situated at Chungcheongbuk-do, South Korea. The enlargement is predicted so as to add capability for roughly 35,000 8-inch wafers monthly, supporting manufacturing of GaN, BCDMOS, and SiC processes. Upon completion, DB HiTek’s whole month-to-month wafer capability will enhance by 23%, from 154,000 to 190,000 wafers.

In the meantime, DB HiTek will take part in ICSCRM(The Worldwide Convention on Silicon Carbide and Associated Supplies) 2025, scheduled for September 15–18 at BEXCO in Busan. At this world business discussion board, DB HiTek will spotlight progress in SiC course of growth alongside its GaN and BCDMOS applied sciences, partaking instantly with prospects and business leaders.