On the EPIC Basis and Fraunhofer summit right this moment, there was a chat on Fraunhofer’s imaginative and prescient for India: Boosting Cross-Sector R&D in Microelectronics for Industrial Innovation was offered by Dr. Stephan Guttowski, Managing Director, Analysis Fab Microelectronics Germany (FMD) and Central Workplace of Fraunhofer Group for Microelectronics.

Semiconductors an innovation driver
Semiconductors are essential as an innovation driver, particularly for automotive. Microelectronics is vital enabling know-how for a lot of purposes. Fraunhofer-Gesellschaft is a number one analysis group of the world. We deal with industrial contracts and publicly-funded analysis tasks. 

Fraunhofer mannequin is supposed to generate at the very least two-thirds of income from exterior sources. Fraunhofer prospects commercialize extra improvements and improve gross sales. Our actions demonstrably create extra jobs. 

Good, safe, scalable microelectronics
Good, Safe, Scalable – Microelectronics by FMD for World Partnerships, was offered by Prof. Dr. Albert Heuberger, Govt Director, Fraunhofer Institute for Built-in Circuits (IIS); Spokesman of the Fraunhofer Microelectronics Group; Chairman of the Analysis Fab Microelectronics Germany (FMD).

He stated we’ve got many colleagues from India who contribute to our work. We convey application-oriented analysis that can be utilized for actual services and products. They are often scaled up into manufacturing, and are manufacturing prepared. FMD is among the largest cross-site R&D cooperation for micro and nanoelectronics in Europe. 

We have now key goals. We convey collectively analysis in microelectronics that’s unfold throughout many institutes in Germany. We’re bridging hole between primary analysis and customer-specific product growth. We’re additionally offering broad vary of supplies and so forth. We have now FMD capabilities unfold throughout Germany.

Some examples are: MEMS micromirror scanner, ultra-low energy vitality harvesting receivers, and so forth. We additionally supply R&D companies throughout your complete worth chain. We additionally work with IDMs, supplies corporations, instrument corporations, and so forth. We additionally work with verticals that construct digital programs. 

There are advantages for semiconductors. India could be a strategic microelectronics hub sooner or later. We even have a pilot line for superior packaging and HI for digital elements and programs (APECS). 

Deal with UWBG
Subsequent Technology Energy based mostly on (Extremely-) Vast Bandgap Supplies, was offered by Prof. Dr. Jörg Schulze, Director, Fraunhofer Institute for Built-in Methods and System Expertise (IISB) and Dr. Eike Meissner. 

We undoubtedly want energy electronics in programs. The world vitality consumption has been rising quickly. We want environment friendly energy dealing with and better energy density in future units. Epitaxy of system tech might be delivered to the system degree. Fraunhofer IISB is specialist for UWBG semiconductor supplies and system growth (AlN) from crystals to units. 

WBG is alleged to be superior to silicon. There are express advantages of UWBG. They drastically decrease transmission losses, excellent dynamic properties, and so forth. System advantages embody greater effectivity, extra compact programs, and diminished prices at system degree. GaN and AlN are masking a variety of subject in energy electronics. 

Advantages of UWBG for energy transistor design are vital breakdown voltage scales with band hole, drift layer thickness scales inversely with band hole, and bigger band hole permits thinner drift layers.

AlN is the one materials suitable with excessive energy density. Smaller variety of chips are wanted for energy programs. For next-gen energy for future mobility, we want high-power DC-DC converters. Eg., gasoline cell automobiles. We even have modular MW inverter system for Porsche. It was constructed on 1200V SiC-half bridge module with 24 chips in parallel. 

We even have energy electronics at low temperature. GaN-based HEMTs outperform SiC and Si at low operation temperatures. We have now excessive expectations from AlN as a consequence of operation at low temperatures, radiation hardness, and so forth.

We made first AlN-based transistors on native AlN wafers. TRL degree stays decrease, in comparison with GaN and SiC. We have now an AlN pilot line — from crystal progress to units at IISB. 

We’re engaged on environment friendly energy conversion, quick switching, compact and lightweight weight programs, and robustness in harsh environments. We even have a WBG pilot line.